Title :
The effect of residual adsorbed gases on silicon isotope amount ratio measurements [in Avogadro constant determination]
Author :
Valkiers, S. ; Gonfiantini, R. ; Taylor, P. ; De Bievre, P.
Author_Institution :
Inst. for Reference Mater. & Meas., Eur. Comm., Geel, Belgium
Abstract :
Summary form only given, as follows. An adsorption model developed for molecular flow inlet system was applied successfully to remove memory effects in high accuracy isotopic measurements, especially in the Si isotopic measurements leading to improved values for the Avogadro constant.
Keywords :
adsorption; constants; isotope relative abundance; isotope separation; mass measurement; mass spectra; mass spectroscopy; silicon; Avogadro constant determination; Si; SiF/sub 4/; adsorption model; high accuracy isotopic measurements; mass spectrometer inlet system; memory effects removal; molar mass; molecular flow inlet system; residual adsorbed gases effect; silicon isotope amount ratio measurements; Fluid flow measurement; Gases; Lead isotopes; Linearity; Mass spectroscopy; Silicon; Time measurement;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5018-9
DOI :
10.1109/CPEM.1998.699967
