Title :
Silicon lattice comparisons related to the Avogadro project: uniformity of new material and surface preparation effects
Author :
Kessler, E.G., Jr. ; Owens, S. ; Henins, A. ; Deslattes, R.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
New silicon material specifically produced for the Avogadro project has been surveyed for lattice parameter uniformity with a relative uncertainty near 1/spl times/10/sup -8/. Samples distributed longitudinally and radially have been used. Unexpected dependence of lattice parameter values on surface preparation has been noted.
Keywords :
X-ray diffraction; chemical mechanical polishing; constants; etching; grinding; lattice constants; measurement uncertainty; silicon; Avogadro project; Bragg angle changes; NIST lattice comparator; Si; chemical mechanical polishing; etching; grinding; lattice parameter uniformity; material uniformity; relative uncertainty; silicon lattice comparisons; surface preparation dependence; Chemicals; Etching; Lattices; NIST; Nitrogen; Optical interferometry; Optical recording; Optical surface waves; Position measurement; Silicon;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5018-9
DOI :
10.1109/CPEM.1998.699968
