Title :
Using test structures to assess the impact of critical process steps on MOS transistor matching
Author_Institution :
Philips Semicond., Nijmegen, Netherlands
Abstract :
This paper demonstrates the use of test structures to assess the impact of critical process steps on MOS transistor matching performance. The results of this assessment are used to improve the critical process steps, resulting in optimum MOS transistor matching performance
Keywords :
MOSFET; annealing; rapid thermal processing; semiconductor device manufacture; semiconductor device reliability; semiconductor device testing; MOS transistor matching; MOS transistor matching performance; critical process steps; final anneal; optimum MOS transistor matching performance; salicidation; test structures; Annealing; CMOS process; Fluctuations; Hydrogen; Interface states; MOS devices; MOSFETs; Semiconductor device testing; Threshold voltage; Titanium;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688053
