DocumentCode
2958299
Title
Using test structures to assess the impact of critical process steps on MOS transistor matching
Author
Elzinga, H.
Author_Institution
Philips Semicond., Nijmegen, Netherlands
fYear
1998
fDate
23-26 Mar 1998
Firstpage
119
Lastpage
122
Abstract
This paper demonstrates the use of test structures to assess the impact of critical process steps on MOS transistor matching performance. The results of this assessment are used to improve the critical process steps, resulting in optimum MOS transistor matching performance
Keywords
MOSFET; annealing; rapid thermal processing; semiconductor device manufacture; semiconductor device reliability; semiconductor device testing; MOS transistor matching; MOS transistor matching performance; critical process steps; final anneal; optimum MOS transistor matching performance; salicidation; test structures; Annealing; CMOS process; Fluctuations; Hydrogen; Interface states; MOS devices; MOSFETs; Semiconductor device testing; Threshold voltage; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location
Kanazawa
Print_ISBN
0-7803-4348-4
Type
conf
DOI
10.1109/ICMTS.1998.688053
Filename
688053
Link To Document