DocumentCode :
2958791
Title :
Global Shutter CMOS Image Sensor With Wide Dynamic Range
Author :
Belenky, Alexander ; Fish, Alexander ; Yadid-Pecht, Orly
Author_Institution :
Ben-Gurion Univ., Beer-Sheva
fYear :
2006
fDate :
10-13 Dec. 2006
Firstpage :
314
Lastpage :
317
Abstract :
A novel concept for global shutter CMOS image sensors with Wide Dynamic Range (WDR) implementation is presented. The proposed imager is based on the multi sampling WDR approach and it allows an efficient global shutter pixel implementation achieving small pixel size and high fill factor. The proposed imager provides wide DR by applying adaptive exposure time to each pixel, according to the local illumination intensity level. Two pixel configurations, employing different kinds of 1-bit in-pixel memory were implemented. An imager, including all proposed pixels was designed and simulated in a mixed-signal 0.18 mum CMOS technology. While operating at 1.8 V voltage supply the proposed sensors achieve the DR up to 120 dB. System architecture and operation are discussed and simulation results are presented.
Keywords :
CMOS image sensors; mixed analogue-digital integrated circuits; CMOS image sensor; active pixel sensors; adaptive exposure time; dynamic range; fill factor; global shutter pixel implementation; illumination intensity level; mixed-signal CMOS technology; size 0.18 mum; voltage 1.8 V; word length 1 bit; CMOS image sensors; Dynamic range;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location :
Nice
Print_ISBN :
1-4244-0395-2
Electronic_ISBN :
1-4244-0395-2
Type :
conf
DOI :
10.1109/ICECS.2006.379788
Filename :
4263366
Link To Document :
بازگشت