Title :
A CMOS analogue function VHDL-AMS behavioral ageing model
Author :
Mongellaz, Benoîit ; Marc, Françcois ; Bestory, Corinne ; Danto, Yves
Author_Institution :
CNRS UMR, Talence, France
Abstract :
This paper presents a method to develop stressed behavioral models of MOSFET and an analogue block: operational transconductance amplifier. Our approach is based on an experimental tests to evaluate electrical ageing effects on MOSFET. The experimental data set is used to build a MOSFET device ageing VHDL-AMS model that is included in an OTA VHDL-AMS model to define a stressed behavioral model of the amplifier.
Keywords :
CMOS analogue integrated circuits; MOSFET; hardware description languages; operational amplifiers; CMOS analogue function; MOSFET; VHDL-AMS behavioral ageing model; electrical ageing effects; operational transconductance amplifier; stressed behavioral model; Aging; Circuit simulation; Degradation; Electric variables; Electron traps; Hot carrier injection; Hot carriers; MOSFETs; Predictive models; Semiconductor device modeling; Ageing Simulation; CMOS; Hot-Carrier; VDHL-AMS;
Conference_Titel :
Industrial Electronics, 2004 IEEE International Symposium on
Print_ISBN :
0-7803-8304-4
DOI :
10.1109/ISIE.2004.1571805
