• DocumentCode
    2959370
  • Title

    Known good die achieved through wafer level burn-in and test

  • Author

    Ballouli, Walid ; McKenzie, Teresa ; Alizy, Nouri

  • Author_Institution
    Motorola Semicond. Products Sector, Austin, TX, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    153
  • Lastpage
    159
  • Abstract
    Motorola has developed and qualified a low-cost method to burn-in and test die at the wafer level rather than the historical die package level. This wafer level burn-in method utilizes a sacrificial metal circuit that is applied to the wafer at the post-fabrication process. The sacrificial metal circuit is designed so that each die is connected to adjacent dice to form die clusters. These clusters are electrically powered by a set signal, power, and ground circuitry. Sacrificial metal test pads allow contact to the cluster for burn-in and electrical testing. The test pads can be placed over active dice or around the wafer perimeter
  • Keywords
    integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; active dice; die cluster contact; die clusters; die interconnection; electrical testing; electrically powered clusters; ground circuitry; known good die; power circuitry; sacrificial metal circuit; sacrificial metal test pads; set signal; test pad placement; wafer level burn-in; wafer level burn-in method; wafer level test; wafer perimeter; wafer post-fabrication process; Automotive engineering; Circuit testing; Electronics industry; Engineering profession; Manufacturing industries; Marketing and sales; Semiconductor device manufacture; Semiconductor device packaging; Semiconductor device testing; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Manufacturing Technology Symposium, 2000. Twenty-Sixth IEEE/CPMT International
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1089-8190
  • Print_ISBN
    0-7803-6482-1
  • Type

    conf

  • DOI
    10.1109/IEMT.2000.910724
  • Filename
    910724