Title :
Prediction of AC performance of double-polysilicon bipolar transistors from e-test parameters: An experiment
Author :
Kelly, Sean C. ; Griffith, Edel C. ; Power, James A. ; Neill, Mike O.
Author_Institution :
Analog Devices, Limerick, Ireland
Abstract :
AC characterisation of silicon bipolar and BiCMOS processes for RF applications is necessary because of the ever-increasing operating speed of bipolar devices. The data acquisition parameter extraction steps associated with AC characterisation and modelling are time consuming and tedious and cannot easily be implemented as part of standard process monitor measurements. This paper discusses a methodology for relating the readily available e-test parameter database to the AC parameters which are more difficult to obtain. The work was done on a 0.6 μm BiCMOS process which is suited to mixed mode RF chip designs
Keywords :
BiCMOS integrated circuits; bipolar integrated circuits; bipolar transistors; data acquisition; elemental semiconductors; integrated circuit modelling; integrated circuit testing; microwave integrated circuits; mixed analogue-digital integrated circuits; silicon; 0.6 micron; AC characterisation; AC parameters; AC performance; BiCMOS process; RF applications; Si; bipolar devices; data acquisition parameter extraction; double-polysilicon bipolar transistors; e-test parameter database; e-test parameters; mixed mode RF chip designs; modelling; operating speed; process monitor measurements; silicon BiCMOS processes; silicon bipolar processes; BiCMOS integrated circuits; Condition monitoring; Data acquisition; Databases; Measurement standards; Parameter extraction; Radio frequency; Semiconductor device measurement; Silicon; Time measurement;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688059
