DocumentCode
2959429
Title
Integrated RF Devices in Suspended Technology
Author
Leblond, Hervé ; Baillargeat, Dominique ; Blondy, Pierre
Author_Institution
Limoges Unive., Limoges
fYear
2006
fDate
10-13 Dec. 2006
Firstpage
475
Lastpage
477
Abstract
This paper presents a new suspended technology which is fully CMOS-compatible. The technology is applied to the design of several microwave devices on silicon substrate such as spiral inductors, metal-air-metal capacitors and band pass filters. We have achieved a high peak Q factor of 95 with a fabricated inductor of 4.6 nH. Metal-air-metal capacitors have been fabricated using the same process. These elements are used to design a differential band pass filter at 5 gigahertz.
Keywords
CMOS integrated circuits; MMIC; band-pass filters; capacitors; inductors; integrated circuit design; integrated circuit technology; microwave filters; CMOS-compatibility; Q factor; differential band pass filters; frequency 5 GHz; integrated RF devices; metal-air-metal capacitors; microwave devices design; silicon substrate; spiral inductors; suspended technology; Band pass filters; CMOS technology; Capacitors; Inductors; Microwave devices; Microwave technology; Q factor; Radio frequency; Silicon; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location
Nice
Print_ISBN
1-4244-0395-2
Electronic_ISBN
1-4244-0395-2
Type
conf
DOI
10.1109/ICECS.2006.379828
Filename
4263406
Link To Document