DocumentCode
2960031
Title
A Low-Power Highly Linear CMOS Transconductance Topology
Author
Zare-Hoseini, Hashem ; Kale, Izzet ; Morling, Richard C S
Author_Institution
Westminster Univ., London
fYear
2006
fDate
10-13 Dec. 2006
Firstpage
620
Lastpage
623
Abstract
A new technique for realizing highly low-power linear transconductances is presented. The technique is based on using floating transistors in the input stage of the transconductor acting as source followers along with a degeneration resistor. Using floating transistors guarantees that the input signal is replicated almost perfect to the resistor terminals and constitute a close-to-ideal transconductance. There could be many ways of realizing the technique considering the required linearity, the power consumption and the frequency response parameters. An example embodiment of the technique was studied followed by circuit level simulations carried out using 0.18 um CMOS technology. Simulation results show that for an input signal of 1.8 Vpp (peak to peak) and power supply of 1.8 v, the Total Harmonic Distortion (THD) was less that 103 dB (<10-3 %) with 200 muA current consumption for a normalized output which shows the high linearity of the transconductance.
Keywords
CMOS integrated circuits; frequency response; harmonic distortion; low-power electronics; network topology; resistors; current 200 muA; degeneration resistor; floating transistors; frequency response; low-power highly linear CMOS transconductance topology; power consumption; size 0.18 mum; total harmonic distortion; CMOS technology; Circuit simulation; Energy consumption; Frequency response; Linearity; Power supplies; Resistors; Topology; Transconductance; Transconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location
Nice
Print_ISBN
1-4244-0395-2
Electronic_ISBN
1-4244-0395-2
Type
conf
DOI
10.1109/ICECS.2006.379865
Filename
4263443
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