Title :
A novel unified transient enhanced diffusion model on the basis of RSF with process database
Author :
Sato, Hisako ; Tsuneno, Katsumi ; Masuda, Hiroo
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
A novel unified TED (transient enhanced diffusion) model for RTA and furnace processes is proposed on the basis of the vacancy-assisted diffusion model. The effective diffusivity is described by a RSF (response surface function) based on relaxation-time approximation of point defects, which depends on the annealing temperature and implant dose. The parameters were calibrated with a database set of experimental test structures. The ramp-up effect is taken into account with a new damage relaxation budget equation. In particular, the BF2 implant-induced damage was demonstrated. It results in an excellent experimental agreement within Δxj<0.01 μm for xj=0.08-0.15 μm N/P junction formations
Keywords :
annealing; diffusion; doping profiles; impurity-vacancy interactions; integrated circuit testing; ion beam effects; ion implantation; rapid thermal annealing; semiconductor process modelling; vacancies (crystal); BF2 implant-induced damage; N/P junction formations; RSF; RTA; Si; Si:B; Si:BF2; Si:P; annealing temperature; damage relaxation budget equation; effective diffusivity; furnace processes; implant dose; parameter calibration; point defects; process database; ramp-up effect; relaxation-time approximation; response surface function; test structures; unified TED model; unified transient enhanced diffusion model; vacancy-assisted diffusion model; Boron; Databases; Equations; Furnaces; Implants; Rapid thermal annealing; Response surface methodology; Semiconductor process modeling; Temperature dependence; Testing;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688067
