• DocumentCode
    2960879
  • Title

    A new test structure for evaluation of extrinsic oxide breakdown

  • Author

    Shiga, Katsuya ; Komori, Junko ; Katsumata, Masalumi ; Teramoto, Akinobu ; Sekine, Masaliro

  • Author_Institution
    Mitsubishi Electr. Corp., Hyogo, Japan
  • fYear
    1998
  • fDate
    23-26 Mar 1998
  • Firstpage
    197
  • Lastpage
    200
  • Abstract
    A new test structure for evaluation of extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability is shown. By using this new test structure, activation energies for not only the intrinsic breakdown but also for the extrinsic breakdown are obtained
  • Keywords
    MOS capacitors; MOS integrated circuits; dielectric thin films; electric breakdown; failure analysis; integrated circuit reliability; integrated circuit testing; MOS capacitor test structures; Si; SiO2-Si; activation energy; active gate area; extrinsic breakdown; extrinsic oxide breakdown; intrinsic breakdown; reliability; test structure; Accuracy; Electric breakdown; Electrodes; Laboratories; MOS capacitors; MOS devices; Stress; Testing; Ultra large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
  • Conference_Location
    Kanazawa
  • Print_ISBN
    0-7803-4348-4
  • Type

    conf

  • DOI
    10.1109/ICMTS.1998.688068
  • Filename
    688068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2960879