Title :
A 4 GHz fourth-order SiGe HBT band pass /spl Delta//spl Sigma/ modulator
Author :
Weinan Gao ; Cherry, J.A. ; Snelgrove, W.M.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
Test results for a fourth-order band pass (BP) /spl Delta//spl Sigma/ modulator (/spl Delta//spl Sigma/M) are presented. The 0.5 /spl mu/m SiGe HBT design uses active LC resonators with Q enhancement and return-to-zero latches to drive the feedback DACs. The packaged circuit consumes 350 mW from a single 5 V supply when clocking at 4 GHz. Measured results indicate a maximum SNR of 53 dB, SFDR of 69 dB, and a dynamic range of 62 dB, all in a 4 MHz bandwidth.
Keywords :
Ge-Si alloys; Q-factor; bipolar integrated circuits; delta-sigma modulation; heterojunction bipolar transistors; modulators; semiconductor materials; 0.5 micron; 4 GHz; 4 MHz; 5 V; 53 dB; Q-factor enhancement; SiGe; SiGe HBT; active LC resonators; bandpass /spl Delta//spl Sigma/ modulator; feedback DACs; fourth-order type; return-to-zero latches; Circuit testing; Clocks; Delta modulation; Dynamic range; Feedback; Germanium silicon alloys; Heterojunction bipolar transistors; Latches; Packaging; Silicon germanium;
Conference_Titel :
VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4766-8
DOI :
10.1109/VLSIC.1998.688074
