DocumentCode :
2961041
Title :
A 0.9-ns-access, 700-MHz SRAM macro using a configurable organization technique with an automatic timing adjuster
Author :
Ando, K. ; Higeta, K. ; Fujimura, Y. ; Mori, K. ; Nakayama, M. ; Nambu, H. ; Miyamoto, K. ; Yamaguchi, K.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
fYear :
1998
fDate :
11-13 June 1998
Firstpage :
182
Lastpage :
183
Abstract :
The key to improving the performance of a single chip processor is to incorporate many varieties of SRAM macros with a word/bit-flexible configuration. To improve the performance even more, a configurable organization technique featuring a leaf cell design is proposed. In applying the technique, the timing design became too critical for the high-performance processor. An automatic timing adjuster is thus proposed to adjust the sense amplifier activation timing automatically in each organization. In addition, a low Vth MOS transistor is applied in order to improve access time. To overcome the increase in current leakage due to a low Vth, a back-bias control circuit is also proposed. These techniques in conjunction with a 0.25 /spl mu/m CMOS process make it possible to achieve a 0.9 ns access, 700 MHz SRAM macro.
Keywords :
CMOS memory circuits; SRAM chips; macros; timing; 0.25 micron; 0.9 ns; 700 MHz; CMOS process; SRAM macro; automatic timing adjuster; back-bias control circuit; configurable organization technique; current leakage; leaf cell design; low Vth MOS transistor; low threshold voltage MOSFET; sense amplifier activation timing; single chip processor; timing design; word/bit-flexible configuration; Automatic control; Clocks; Counting circuits; Decoding; Delay effects; Laboratories; Random access memory; Synchronization; Timing; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-4766-8
Type :
conf
DOI :
10.1109/VLSIC.1998.688077
Filename :
688077
Link To Document :
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