An analysis of hot-carrier-induced photoemission profiles in n-MOSFETs

Experimental results for high electric field effects in n-MOSFETs with L=0.35~2.0 μm are presented with a spatial resolution of 27 nm/pixel on a CCD imager. Profiles of photoemission induced by hot-electrons have been measured with a photoemission microscope along the channel length direction. Under the bias condition of maximum substrate current, photoemission peaks are located at the LDD-drain edge or the n⁺-drain edge for the devices with L=0.35 or L⩾0.40 μm, respectively. A peak position only in the 0.35 μm device shifts toward the drain side by about 80 nm at V_D=7.0 V. Since V_D does not affect peak positions in the L⩾0.40 μm devices, the L=0.35 μm device may have a different photoemission mechanism