DocumentCode :
2961259
Title :
Optimal Dark Current Reduction in Quantum Well 9 μm GaAs/AlGaAs Infrared Photodetectors With Improved Detectivity
Author :
Nejad, Shahram Mohammad ; Pourmahyabadi, Maryam ; Amidian, Ali Asghar
Author_Institution :
Iran Univ. of Sci. & Technol. (IUST), Tehran
fYear :
2006
fDate :
10-13 Dec. 2006
Firstpage :
918
Lastpage :
921
Abstract :
In this paper, an optimization approach is presented to decrease the dark current in GaAs/AlGaAs QWIPs. Dark current noise, as shown, can be reduced by increasing Al density in barriers, decreasing detector dimensions and increasing the periodic length of the structure. It is also shown that increasing the number of periods can reduce both the dark current and responsivity. Therefore, devices can be optimally designed through judicious choice of these parameters. An optimal photodetector structure is designed and simulated to achieve low dark current (11 nA) and detectivity of 1012 cm(Hz)1/2/W which is an order of magnitude greater than the present values.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; photodetectors; semiconductor quantum wells; current 11 nA; dark current noise; infrared photodetectors; optimal dark current reduction; quantum well; size 9 μm; Dark current; Electrons; Gallium arsenide; Infrared detectors; Optical noise; Optical scattering; Photodetectors; Semiconductor device noise; Temperature sensors; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location :
Nice
Print_ISBN :
1-4244-0394-4
Electronic_ISBN :
1-4244-0395-2
Type :
conf
DOI :
10.1109/ICECS.2006.379939
Filename :
4263517
Link To Document :
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