A CMOS band-gap reference circuit with sub 1 V operation

Author

Banba, H. ; Shiga, H. ; Umezawa, A. ; Miyaba, T. ; Tanzawa, T. ; Atsumi, S. ; Sakui, K.

Author_Institution

ULSI Device Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1998

fDate

11-13 June 1998

Firstpage

228

Lastpage

229

Abstract

This paper proposes a CMOS band-gap reference (BGR) circuit, which can successfully operate with sub-1 V. In the conventional BGR circuit, the output voltage, Vref, is the sum of the built-in voltage of the diode, Vf, and the thermal voltage, VT, of kT/q multiplied by a constant. Thereby, Vref is about 1.25 V, which limits a low Vcc operation below 1 V. Conversely, in the proposed BGR circuit, Vref has been converted from the sum of two currents; one is proportional to Vf; and the other is proportional to VT. An experimental BGR circuit, which is simply composed of a CMOS opamp, diodes, and resistors, has been fabricated in a conventional double metal 0.4 /spl mu/m process. Measured Vref is 515 mV/spl plusmn/15 mV (3 /spl sigma/) for 23 samples on the same wafer at 27/spl deg/C through 125/spl deg/C.

Keywords

CMOS analogue integrated circuits; operational amplifiers; reference circuits; 0.4 micron; 27 to 125 C; 515 mV; CMOS band-gap reference circuit; CMOS opamp; double metal CMOS process; sub 1 V operation; CMOS memory circuits; CMOS process; Circuit testing; Flash memory; MOSFETs; Photonic band gap; Resistors; Semiconductor diodes; Temperature; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4766-8

Type

conf

DOI

10.1109/VLSIC.1998.688094

Filename

688094