DocumentCode :
2961347
Title :
Thyristors and triacs control by a high frequency sine signal
Author :
Mauriac, C. ; Raingeaud, Y. ; Baillou, J. ; Gonthier, L. ; Pezzani, R.
Author_Institution :
Lab. of Power Microelectron., Tours Univ., France
Volume :
2
fYear :
2004
fDate :
4-7 May 2004
Firstpage :
1029
Abstract :
The aim of this paper is to present a new control mode of AC switch (thyristors, triacs ...). The applied signal on the device gate is a "high frequency" alternating sine, instead of a pulse-shaped signal. This solution has been retained in order to integrate galvanic isolation with power-controlled switches. Control by sine signal implements the accumulation of electrical charges inside the structure leading to the SCR (silicon controlled rectifier) firing. The efficiency of the gate signal is conditioned by the architecture of the semiconductor device, particularly the gate-cathode junction which has a "pilot" role in the firing. Comprehension of physical phenomena, which occur in the switch and more precisely in the gate\´s area, during the firing phase, allows us to adapt the control circuit or to imagine new SCR structures optimised for a high frequency control.
Keywords :
pulse shaping circuits; semiconductor switches; thyristors; AC switch thyristor control mode; device gate; frequency control; galvanic isolation; gate-cathode junction; high frequency sine signal; power-controlled switches; pulse-shaped signal; semiconductor device; silicon controlled rectifier; triacs control mode; Current measurement; Diodes; Frequency; Galvanizing; Laboratories; Microelectronics; Power semiconductor switches; Thyristors; VHF circuits; Voltage control; Galvanic isolation; SCR; Triac;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, 2004 IEEE International Symposium on
Print_ISBN :
0-7803-8304-4
Type :
conf
DOI :
10.1109/ISIE.2004.1571955
Filename :
1571955
Link To Document :
بازگشت