DocumentCode :
2961414
Title :
Improvement of moisture resistance in plastic encapsulated MOS-IC by surface finishing copper leadframe
Author :
Yoshioka, Osamu ; Okabe, Norio ; Nagayama, Sadao ; Yamagishi, Ryozo ; Murakami, G.
Author_Institution :
Hitachi Cable Ltd., Ibaraki, Japan
fYear :
1989
fDate :
22-24 May 1989
Firstpage :
464
Lastpage :
471
Abstract :
In recent years, the demand for copper alloy lead-frame materials has been rising. This is due to deterioration of the reliability of plastic-encapsulated ICs because of larger chip size and increased heat generation from more densely integrated chips. However, copper alloys may form a thick, brittle oxide film on the surface as a result of heating during packaging, thus reducing moisture resistance. The surface finishing process for copper alloy lead-frame materials was studied to overcome this problem. It became evident that the improvement of adhesion to resin is effective in preventing the penetration of moisture into the package. This resulted in the development of an Sn-Ni-plated copper lead frame that enhances the moisture resistance
Keywords :
MOS integrated circuits; encapsulation; moisture measurement; MOS-IC; Sn-Ni; adhesion; chip size; heat generation; moisture resistance; plastic encapsulated; surface finishing copper leadframe; surface finishing process; Adhesives; Copper alloys; Lead; Moisture; Packaging; Plastics; Resins; Resistance heating; Surface finishing; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location :
Houston, TX
Type :
conf
DOI :
10.1109/ECC.1989.77790
Filename :
77790
Link To Document :
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