DocumentCode :
2961475
Title :
A new characterization method for accurate capacitor matching measurements using pseudo-floating gate test structures in submicron CMOS and BiCMOS technologies
Author :
Dit Buisson, O. Roux ; Morin, G. ; Paillardet, F. ; Mazaleyrat, E.
Author_Institution :
SGS-Thomson Microelectron., Crolles, France
fYear :
1998
fDate :
23-26 Mar 1998
Firstpage :
223
Lastpage :
227
Abstract :
In deep submicron CMOS and BiCMOS technologies, antenna effects affect the floating gate charge of conventional floating gate test structures, dedicated to capacitor matching measurement. In this paper, a new pseudo-floating gate test structure is designed. After test structure and modeling presentation, the testing method and results are given for several capacitor layouts (poly-poly and metal-metal)
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; MOS capacitors; capacitance measurement; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit testing; BiCMOS technology; CMOS technology; Si; SiO2-Si; antenna effects; capacitor layout; capacitor matching measurement; capacitor matching measurements; characterization method; floating gate charge; floating gate test structures; metal-metal capacitor; modeling; poly-poly capacitor; pseudo-floating gate test structures; test structure; testing method; Antenna measurements; CMOS technology; Capacitance measurement; Capacitors; Current measurement; Diodes; MOSFET circuits; Protection; Testing; Time measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
Type :
conf
DOI :
10.1109/ICMTS.1998.688096
Filename :
688096
Link To Document :
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