Title :
A 20-GHz and 46-GHz, 32x6-bit ROM for DDS Application in InP DHBT Technology
Author :
Manandhar, Sanjeev ; Turner, Steven E. ; Kotecki, David E.
Author_Institution :
Maine Univ., Orono
Abstract :
Two 32times6-bit read only memory (ROM) circuits, employing an architecture suitable for use as a phase to amplitude converter for direct digital synthesizers (DDS), have been designed in InP double heterojunction bipolar transistor (DHBT) technology. These ROM designs use a -3.8 V power supply and dissipate 1.95 W and 7.07 W of power respectively. The maximum operating clock frequencies for these designs are simulated to be 20 GHz and 46 GHz respectively.
Keywords :
III-V semiconductors; bipolar MIMIC; bipolar MMIC; bipolar memory circuits; direct digital synthesis; heterojunction bipolar transistors; indium compounds; read-only storage; DDS; DHBT; InP Interface; ROM circuits; ROM design; direct digital synthesizer application; double heterojunction bipolar transistor technology; frequency 20 GHz; frequency 46 GHz; phase to amplitude converter; power 1.95 W; power 7.07 W; read only memory circuits; voltage 3.8 V; word length 6 bit; CMOS technology; Circuits; DH-HEMTs; Decoding; Double heterojunction bipolar transistors; Frequency; Indium phosphide; Parasitic capacitance; Read only memory; Synthesizers;
Conference_Titel :
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location :
Nice
Print_ISBN :
1-4244-0395-2
Electronic_ISBN :
1-4244-0395-2
DOI :
10.1109/ICECS.2006.379960
