Compact Modeling and Applications of CNTFETs for Analog and Digital Circuit Design

This paper presents some case-studies of an emerging nano-device, the carbon nanotube field-effect transistor (CNT-FET). First, we propose two design-oriented compact models, for both unipolar and ambipolar CNTFETs, i.e. devices with a classical behavior (MOSFET-like CNTFET) and an ambipolar behavior (Schottky-Barrier CNTFET). Models have been compared with exact numerical simulations and implemented in VHDL-AMS. Then we show some possible applications of CNTFETs in both digital and analog circuit design. In particular, an analog circuit based on the very particular I_D-V_GS characteristic of the ambipolar CNTFET is demonstrated.