A Non-Volatile Multi-Level Memory Cell Using Molecular-Gated Nanowire Transistors

A novel multi-level memory cell (MLC) using molecular-gated nanowire field effect transistors (MG-NWFET) is presented. This new memory point, technologically homogeneous, can store a multivalued information within a highly compact and scalable structure. Using a previously presented electrical modeling of a MG-NWFET, simulation results demonstrate the potential of such memory cell for non-volatile, ultra-dense and low-cost memories.