Title :
10 GS/s 8-bit bipolar THA in SiGe technology
Author :
Borokhovych, Yevgen ; Scheytt, J. Christoph
Author_Institution :
BTU Joint Lab., IHP, Frankfurt (Oder), Germany
Abstract :
Design and measurement of the bipolar Track-and-Hold Amplifier is described in this paper. The circuit works at the sample rate of 10 GS/s and has linearity of 8-bit at input signal of 3 GHz. Based on the open-loop switched emitter follower architecture, the circuit implies several techniques to achieve 8-bit performance at GHz range. An input buffer and switch were modified to decrease errors and increase the speed.
Keywords :
Ge-Si alloys; buffer circuits; microwave amplifiers; sample and hold circuits; semiconductor materials; SiGe; bipolar THA; bipolar track-and-hold amplifier; buffer circuit; frequency 3 GHz; open-loop switched emitter follower architecture; word length 8 bit; Fabrication; Switches; Switched Emitter Follower; Track-and-Hold Amplifier; input feedthrough;
Conference_Titel :
NORCHIP, 2011
Conference_Location :
Lund
Print_ISBN :
978-1-4577-0514-4
Electronic_ISBN :
978-1-4577-0515-1
DOI :
10.1109/NORCHP.2011.6126699
