Title :
The molar volume of silicon: discrepancies and limitations
Author :
Deslattes, R.D. ; Kessler, E.G., Jr.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
A new representation of the current molar volume discrepancy is offered which attends to a previous incorrect account of early NBS work. First non-null test results are presented from comparisons of discrepant samples. A discussion of intrinsic limitations of melt grown crystals is included.
Keywords :
constants; crystal growth from melt; density measurement; interstitials; silicon; vacancies (crystal); voids (solid); Avogadro constant determination; EPR signal; Si; comparisons of discrepant samples; interstitials; intrinsic limitations; mean molar mass; melt grown crystals; molar volume discrepancy; non-null test results; vacancies; voids; Cleaning; Crystalline materials; Crystals; Density measurement; Europe; Metrology; NIST; Silicon; Steel; Testing;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 1998 Conference on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5018-9
DOI :
10.1109/CPEM.1998.700004
