On wafer X-parameter based modeling of a switching cascode power amplifier

X-parameters have been introduced as the natural extension of S-parameters capable of characterizing a nonlinear device excited by a large-signal input. This paper describes validation of the X-parameter model of a switching cascode power amplifier (PA), which has strong nonlinearity. The X-parameter model of the PA was measured and extracted by an Agilent N5245A PNA-X. Measurements were done on wafer and deem-bedded to the input and output pads of the device. An Enhanced Data rates for GSM Evolution (EDGE) signal was applied to the model for simulations. The simulated relative levels of output spectrum and RMS value of error vector magnitude (EVM) were compared with the measured data in order to validate the X-parameter model. A good match was achieved between the simulation and measurement. The maximum difference between the simulated and measured relative levels of output spectrum is 4 dB. The maximum error between the simulated and measured EVM is less than 3 %-point.