DocumentCode :
2962468
Title :
Modeling of cascode modulated power amplifiers
Author :
Sira, Daniel ; Larsen, Torben
Author_Institution :
Dept. of Electron. Syst., Aalborg Univ., Aalborg, Denmark
fYear :
2011
fDate :
14-15 Nov. 2011
Firstpage :
1
Lastpage :
4
Abstract :
Two models of the cascode modulated polar power amplifier (PA) are presented. The cascode modulated PA, that operates as a switch mode amplifier with class-E like output network, has a highly nonlinear transfer characteristic. The proposed empirical model is based on modeling of the peak drain current through the cascode connected transistors. A simplified analytical model, that uses mathematical expressions to describe the nonlinear transfer characteristic of the cascode modulated PA, is proposed. The behavior of the proposed baseband models is compared with the RF domain simulations in a 0.13μm CMOS process.
Keywords :
CMOS analogue integrated circuits; power amplifiers; radiofrequency integrated circuits; CMOS process; RF domain simulation; baseband model; cascode connected transistor; cascode modulated polar power amplifier; nonlinear transfer; peak drain current; size 0.13 mum; switch mode amplifier; Analytical models; CMOS process; Radio frequency; Switches; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
NORCHIP, 2011
Conference_Location :
Lund
Print_ISBN :
978-1-4577-0514-4
Electronic_ISBN :
978-1-4577-0515-1
Type :
conf
DOI :
10.1109/NORCHP.2011.6126711
Filename :
6126711
Link To Document :
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