Title :
Cell Ratio Bounds for Reliable SRAM Operation
Author :
Yu, Qiaoyan ; Ampadu, Paul
Author_Institution :
Univ. of Rochester, Rochester
Abstract :
Based on read and write failure analysis, lower and upper bounds for the cell ratio are provided to guide designers in optimizing SRAMs for stability and performance. Simulations show that the error of the proposed closed-form expression is within 10%, an improvement of 20% compared with previously reported bounds. Moreover, considering unequal transistor threshold voltages achieves an additional 13% accuracy improvement.
Keywords :
SRAM chips; failure analysis; read-only storage; SRAM operation; cell ratio bounds; read and write failure analysis; transistor threshold voltages; CMOS technology; Closed-form solution; Failure analysis; Inverters; MOSFET circuits; RNA; Random access memory; Stability analysis; Threshold voltage; Upper bound;
Conference_Titel :
Electronics, Circuits and Systems, 2006. ICECS '06. 13th IEEE International Conference on
Conference_Location :
Nice
Print_ISBN :
1-4244-0395-2
Electronic_ISBN :
1-4244-0395-2
DOI :
10.1109/ICECS.2006.379654
