Title :
Electrical properties of CVD-graphene FETs
Author :
Anteroinen, Johanna ; Wonjae Kim ; Stadius, Kari ; Riikonen, J. ; Lipsanen, H. ; Ryynänen, Jussi
Author_Institution :
Sch. of Electr. Eng., Dept. of Micro & Nanosci., Aalto Univ., Espoo, Finland
Abstract :
Graphene field-effect transistors (GFET) were first presented in 2004, and quickly became an interesting electronics research topic due to the many promises that the material holds. We have fabricated GFETs using an IC-compatible chemical vapour deposition (CVD) process. This paper presents experimental results of graphene field-effect transistors with CVD grown graphene layer. In addition, this paper reviews briefly the state-of-the-art GFETs and device physics.
Keywords :
chemical vapour deposition; field effect transistors; graphene; CVD grown graphene layer; CVD-graphene FET; GFET; IC-compatible chemical vapour deposition process; electrical property; electronics research topic; graphene field effect transistors; graphene field-effect transistors; Educational institutions; Fluctuations; Logic gates; Materials; Nanoelectromechanical systems; Photonic band gap; Transistors;
Conference_Titel :
NORCHIP, 2011
Conference_Location :
Lund
Print_ISBN :
978-1-4577-0514-4
Electronic_ISBN :
978-1-4577-0515-1
DOI :
10.1109/NORCHP.2011.6126720
