An 85dB dynamic range transimpedance amplifier in 40nm CMOS technology

Author

Hassan, Mohammed ; Zimmermann, Horst

Author_Institution

Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria

fYear

2011

fDate

14-15 Nov. 2011

Firstpage

1

Lastpage

4

Abstract

A transimpedance amplifier (TIA with a nominal bandwidth of 280MHz, maximum gain of 2.5kΩ, 85dB dynamic range, 220nA rms equivalent input noise current and a high maximum input current (4mA) overdrive capability) for use with a monitor photodiode inside a packaged communication laser diode is proposed in this work. To enhance the overdrive capabilities of the TIA, a compression technique of the high input current is implemented. The proposed TIA has two regions of operation: a linear region, when the input current is small and a compression region, when the input current is high to prevent the TIA from entering saturation. The TIA is optimized for an external highly capacitive photodiode (≈15pF). The TIA is designed in 40nm CMOS.

Keywords

CMOS analogue integrated circuits; integrated circuit noise; operational amplifiers; photodiodes; CMOS technology; bandwidth 280 MHz; capacitive photodiode; compression technique; dynamic range transimpedance amplifier; equivalent input noise current; linear region; monitor photodiode; packaged communication laser diode; size 40 nm; CMOS integrated circuits; CMOS technology; Photodiodes; Radio frequency; Stimulated emission; TV; Topology; CMOS integrated circuits; feedback amplifiers; nanometer CMOS; optical receivers;

fLanguage

English

Publisher

ieee

Conference_Titel

NORCHIP, 2011

Conference_Location

Lund

Print_ISBN

978-1-4577-0514-4

Electronic_ISBN

978-1-4577-0515-1

Type

conf

DOI

10.1109/NORCHP.2011.6126722

Filename

6126722