Title :
Benchmark methodology of interconnect capacitance simulation using inter-digitated capacitors
Author :
Nakagawa, O.S. ; Oh, S.Y. ; Hsu, T. ; Habu, S.
Author_Institution :
ULSI Res. Lab., Hewlett-Packard Labs., Palo Alto, CA, USA
Abstract :
High-frequency capacitance measurement of inter-digitated metal-oxide-metal capacitors (MOMCAP) is used to benchmark interconnect capacitance simulation results from a computer-aided design (CAD) tool. Three components of interconnect capacitance, total capacitance (Ctot), layer-to-layer capacitance (Cg) and line-to-line capacitance (Cc) are measured efficiently from a single test structure for the benchmark. Metal width, metal height and dielectric thickness of the capacitors are also characterized from the same chip from which the capacitances are measured. An input file for a CAD tool was generated based on this interconnect geometry characterization, and the three components of interconnect capacitance were extracted. The need to build an accurate input file for a CAD tool is demonstrated through the benchmark results
Keywords :
MIM devices; capacitance; capacitors; circuit CAD; dielectric thin films; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit testing; software tools; CAD tool; CAD tool input file; SiO2; capacitance; computer-aided design; dielectric thickness; high-frequency capacitance measurement; interconnect capacitance; interconnect capacitance components; interconnect capacitance simulation; interconnect capacitance simulation benchmark methodology; interconnect geometry characterization; interdigitated capacitors; interdigitated metal-oxide-metal capacitors; layer-to-layer capacitance; line-to-line capacitance; metal height; metal width; single test structure; total capacitance; Benchmark testing; Capacitance measurement; Capacitors; Character generation; Computational modeling; Computer simulation; Design automation; Dielectric measurements; Semiconductor device measurement; Thickness measurement;
Conference_Titel :
Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
Conference_Location :
Kanazawa
Print_ISBN :
0-7803-4348-4
DOI :
10.1109/ICMTS.1998.688103