• DocumentCode
    2962730
  • Title

    Benchmark methodology of interconnect capacitance simulation using inter-digitated capacitors

  • Author

    Nakagawa, O.S. ; Oh, S.Y. ; Hsu, T. ; Habu, S.

  • Author_Institution
    ULSI Res. Lab., Hewlett-Packard Labs., Palo Alto, CA, USA
  • fYear
    1998
  • fDate
    23-26 Mar 1998
  • Firstpage
    235
  • Lastpage
    237
  • Abstract
    High-frequency capacitance measurement of inter-digitated metal-oxide-metal capacitors (MOMCAP) is used to benchmark interconnect capacitance simulation results from a computer-aided design (CAD) tool. Three components of interconnect capacitance, total capacitance (Ctot), layer-to-layer capacitance (Cg) and line-to-line capacitance (Cc) are measured efficiently from a single test structure for the benchmark. Metal width, metal height and dielectric thickness of the capacitors are also characterized from the same chip from which the capacitances are measured. An input file for a CAD tool was generated based on this interconnect geometry characterization, and the three components of interconnect capacitance were extracted. The need to build an accurate input file for a CAD tool is demonstrated through the benchmark results
  • Keywords
    MIM devices; capacitance; capacitors; circuit CAD; dielectric thin films; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit testing; software tools; CAD tool; CAD tool input file; SiO2; capacitance; computer-aided design; dielectric thickness; high-frequency capacitance measurement; interconnect capacitance; interconnect capacitance components; interconnect capacitance simulation; interconnect capacitance simulation benchmark methodology; interconnect geometry characterization; interdigitated capacitors; interdigitated metal-oxide-metal capacitors; layer-to-layer capacitance; line-to-line capacitance; metal height; metal width; single test structure; total capacitance; Benchmark testing; Capacitance measurement; Capacitors; Character generation; Computational modeling; Computer simulation; Design automation; Dielectric measurements; Semiconductor device measurement; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 1998. ICMTS 1998., Proceedings of the 1998 International Conference on
  • Conference_Location
    Kanazawa
  • Print_ISBN
    0-7803-4348-4
  • Type

    conf

  • DOI
    10.1109/ICMTS.1998.688103
  • Filename
    688103