DocumentCode
2962788
Title
Cavity down AlN PGA with inter-polyimide wiring
Author
Inoue, Hirokazu ; Tanaka, Akira ; Okamoto, Masahide ; Arakawa, Hideo ; Okada, Sensuke ; Yamada, Kazuji
Author_Institution
Hitachi Ltd., Ibaraki, Japan
fYear
1989
fDate
22-24 May 1989
Firstpage
513
Lastpage
517
Abstract
A low-thermal-resistance, high-speed pin-grid-array (PGA) package is discussed. To obtain low thermal resistance, a silicon chip was soldered onto a metallized aluminum nitride ceramic substrate that directly contacts an air-cooled fin (a cavity-down structure). Low propagation delay was realized by placing signal lines between low-dielectric-constant polyimide layers that were coated on the substrate. The thermal resistance from the silicon chip to the air environment was 2.7°C/W with a 20-mm-high fin when the air velocity was 2 m/s. The self-inductance of the longest signal line was 20 nH, and the capacitance between the longest signal lines was 1.7 pF. The helium leakage level was about 10-9 atm-cm3/s even after 24 cycles in a thermal cycle test from -55°C to 150°C
Keywords
CMOS integrated circuits; aluminium compounds; ceramics; integrated circuit technology; packaging; -55 to 150 C; 1.7 pF; CMOS; He leakage level; Si-AlN; air environment; air-cooled fin; capacitance; cavity down AlN PGA inter-polyimide wiring; high speed pin grid array package; low-dielectric-constant polyimide layers; metallised AlN ceramic substrate; propagation delay; self-inductance; thermal cycle test; thermal resistance; Aluminum nitride; Ceramics; Contact resistance; Electronics packaging; Metallization; Polyimides; Propagation delay; Silicon; Thermal resistance; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components Conference, 1989. Proceedings., 39th
Conference_Location
Houston, TX
Type
conf
DOI
10.1109/ECC.1989.77798
Filename
77798
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