Analysis of the uniformity of the localized area epitaxy by spectrally resolved scanning photoluminescence

Author

Nuban, M.F. ; Krawczyk, S.K. ; Buchheit, M. ; Blanchet, R.C. ; Nagy, S.C. ; Robinson, B.J. ; Thompson, D.A. ; Simmons, J.G.

Author_Institution

Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France

fYear

1996

fDate

21-25 Apr 1996

Firstpage

23

Lastpage

26

Abstract

In this contribution, room temperature spectrally resolved scanning photoluminescence technique with high spatial resolution (1 μm) is introduced and applied to control the uniformity of the composition and of the thickness of quantum well (QW) structures obtained by localized area epitaxy. Furthermore, this technique is applied here to study lateral uniformity of QW InGaAs/InP heterostructures grown by localized area gas source molecular beam epitaxy (GSMBE) at various conditions (temperature, arsine flow rate) and as a function of stripe width and spacing

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; interface structure; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1 mum; GSMBE; InGaAs-InP; InGaAs/InP heterostructures; arsine flow rate; composition; high spatial resolution; lateral uniformity; localized area epitaxy; localized area gas source molecular beam epitaxy; quantum well; room temperature spectrally resolved scanning photoluminescence; spacing; spectrally resolved scanning photoluminescence; stripe width; thickness; uniformity; Dielectric materials; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Spatial resolution; Substrates; Temperature; Thickness control;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491924

Filename

491924