Title :
Analysis of the uniformity of the localized area epitaxy by spectrally resolved scanning photoluminescence
Author :
Nuban, M.F. ; Krawczyk, S.K. ; Buchheit, M. ; Blanchet, R.C. ; Nagy, S.C. ; Robinson, B.J. ; Thompson, D.A. ; Simmons, J.G.
Author_Institution :
Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France
Abstract :
In this contribution, room temperature spectrally resolved scanning photoluminescence technique with high spatial resolution (1 μm) is introduced and applied to control the uniformity of the composition and of the thickness of quantum well (QW) structures obtained by localized area epitaxy. Furthermore, this technique is applied here to study lateral uniformity of QW InGaAs/InP heterostructures grown by localized area gas source molecular beam epitaxy (GSMBE) at various conditions (temperature, arsine flow rate) and as a function of stripe width and spacing
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; interface structure; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1 mum; GSMBE; InGaAs-InP; InGaAs/InP heterostructures; arsine flow rate; composition; high spatial resolution; lateral uniformity; localized area epitaxy; localized area gas source molecular beam epitaxy; quantum well; room temperature spectrally resolved scanning photoluminescence; spacing; spectrally resolved scanning photoluminescence; stripe width; thickness; uniformity; Dielectric materials; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Spatial resolution; Substrates; Temperature; Thickness control;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491924
