Title :
Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis
Author :
Zemke, D. ; Leister, H.J. ; Müller, G.
Author_Institution :
Inst. fur Werkstoffwissenschaften, Erlangen-Nurnberg Univ., Germany
Abstract :
The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD ≈3·103 cm-2 of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth
Keywords :
III-V semiconductors; crystal growth from melt; dislocation density; indium compounds; semiconductor growth; stress analysis; thermal stresses; 2 in; EPD; InP; InP bulk crystals; InP crystals; LEC facility; VGF; VGF process; dislocation density; flat bottom crucible; growth; numerical simulations; numerical stress analysis; thermal stress; Boundary conditions; Crystallography; Crystals; Indium phosphide; Numerical simulation; Optoelectronic devices; Pressure control; Stress control; Temperature; Thermal stresses;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491930
