Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis

Author

Zemke, D. ; Leister, H.J. ; Müller, G.

Author_Institution

Inst. fur Werkstoffwissenschaften, Erlangen-Nurnberg Univ., Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

47

Lastpage

49

Abstract

The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD ≈3·10³ cm^-2 of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth

Keywords

III-V semiconductors; crystal growth from melt; dislocation density; indium compounds; semiconductor growth; stress analysis; thermal stresses; 2 in; EPD; InP; InP bulk crystals; InP crystals; LEC facility; VGF; VGF process; dislocation density; flat bottom crucible; growth; numerical simulations; numerical stress analysis; thermal stress; Boundary conditions; Crystallography; Crystals; Indium phosphide; Numerical simulation; Optoelectronic devices; Pressure control; Stress control; Temperature; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491930

Filename

491930