Title :
A 12 Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterostructure bipolar transistors
Author :
Bauknecht, R. ; Schneibel, H.P. ; Schmid, J. ; Melchior, H.
Author_Institution :
Inst. of Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
A versatile driver circuit for semiconductor lasers and optical modulators in optical fiber links is presented. The ICs are fabricated in a MOVPE-based InGaAs/InP double heterostructure bipolar transistor technology with fT=66 GHz and fmax=107 GHz. The circuits operate up to 12 Gb/s with maximum output voltages of 3.0 V across 25 Ω and current swings of 120 mA
Keywords :
III-V semiconductors; bipolar digital integrated circuits; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; laser accessories; optical communication equipment; optical fibre communication; optical modulation; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 107 GHz; 12 Gbit/s; 120 mA; 3.0 V; 66 GHz; InGaAs-InP; MOVPE; current swings; double heterostructure bipolar transistors; driver circuit; maximum output voltages; optical fiber links; optical modulator; semiconductor lasers; Doping; Double heterojunction bipolar transistors; Driver circuits; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical modulation; Voltage; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491934
