A 12 Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterostructure bipolar transistors

Author

Bauknecht, R. ; Schneibel, H.P. ; Schmid, J. ; Melchior, H.

Author_Institution

Inst. of Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1996

fDate

21-25 Apr 1996

Firstpage

61

Lastpage

63

Abstract

A versatile driver circuit for semiconductor lasers and optical modulators in optical fiber links is presented. The ICs are fabricated in a MOVPE-based InGaAs/InP double heterostructure bipolar transistor technology with f_T=66 GHz and f_max=107 GHz. The circuits operate up to 12 Gb/s with maximum output voltages of 3.0 V across 25 Ω and current swings of 120 mA

Keywords

III-V semiconductors; bipolar digital integrated circuits; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; laser accessories; optical communication equipment; optical fibre communication; optical modulation; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 107 GHz; 12 Gbit/s; 120 mA; 3.0 V; 66 GHz; InGaAs-InP; MOVPE; current swings; double heterostructure bipolar transistors; driver circuit; maximum output voltages; optical fiber links; optical modulator; semiconductor lasers; Doping; Double heterojunction bipolar transistors; Driver circuits; Heterojunction bipolar transistors; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical modulation; Voltage; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491934

Filename

491934