• DocumentCode
    296314
  • Title

    Resonant tunneling heterojunction bipolar transistors and their applications in high functionality/speed digital circuits

  • Author

    Haddad, G.I.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    Resonant tunneling heterojunction bipolar transistors (RTBT´s) or RTD and HBT combinations are particularly suitable for very high speed/low-power digital circuits. Here we will present recent results on InP-based devices and their applications
  • Keywords
    III-V semiconductors; bipolar digital integrated circuits; heterojunction bipolar transistors; indium compounds; resonant tunnelling transistors; III-V semiconductors; InP; RTBT; circuit functionality; high speed digital circuits; low-power digital circuits; resonant tunneling heterojunction bipolar transistors; Application software; CMOS technology; Circuit simulation; Delay effects; Digital circuits; Equivalent circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Resonant tunneling devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491952
  • Filename
    491952
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=296314