Power performance of InGaAs/InP single HBTs

Author

Sawdai, D. ; Plouchart, J.O. ; Pavlidis, D. ; Samelis, A. ; Hong, K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1996

fDate

21-25 Apr 1996

Firstpage

133

Lastpage

136

Abstract

Typically, the microwave power characteristics of InP/InGaAs SHBTs have not been addressed due to their relatively inferior DC characteristics when compared to DHBTs, which implies early breakdown and thus limited power performance. On the other hand, SHBTs are very attractive for higher frequency applications due to the absence of the heterojunction spike at the base-collector (B-C) interface. Moreover, the homojunction B-C structure offers direct compatibility for HBT integration with PIN diodes, since the latter can be realized by using the B-C-subcollector region. Such integration is needed not only for OEICs but also for MMICs with switching capabilities. This paper reports for the first time a systematic investigation of InP-based SHBT characteristics and demonstrates their suitability for power applications

Keywords

III-V semiconductors; characteristics measurement; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; III-V semiconductors; InGaAs-InP; MMICs; OEICs; breakdown; homojunction base-collector structure; microwave power characteristics; power performance; single HBTs; subcollector region; switching capabilities; Doping; Etching; Fabrication; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Parasitic capacitance; Power generation; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.491953

Filename

491953