Title :
Novel approach for InP-based ultrafast HBTs
Author :
Matine, N. ; Pelouard, J.-L. ; Pardo, E. ; Teissier, R. ; Pessa, M.
Author_Institution :
CNRS, Bagneux, France
Abstract :
In this paper we propose and demonstrate a novel approach for improving high frequency performance of InP-based HBTs. A new structure, the Metal Heterojunction Bipolar Transistor (MHBT) where the semiconductor is replaced by a metal in the collector layer is described. This structure not only ensures high dynamic characteristics, but also provides satisfactory static behavior. MHBT demonstrators manufactured for this study show at Jc=30 KA/cm2 a current gain cutoff frequency, fT, of 51 GHz and a maximum oscillation frequency, fmax of 160 GHz despite their thick base (150 nm) and collector (450 nm) layers. The fmax value is, for this non-optimized structure, in the range of the best values reported for InP-HBTs. In addition the effective delay time (Rc CBC)eff=fT/(8πfmax 2) is as small as 78 fs
Keywords :
III-V semiconductors; characteristics measurement; delays; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor technology; 150 nm; 160 GHz; 450 nm; 51 GHz; 78 fs; III-V semiconductors; InP; collector layer; current gain cutoff frequency; delay time; dynamic characteristics; metal heterojunction bipolar transistor; microwave bipolar transistors; nonoptimized structure; oscillation frequency; static behavior; ultrafast HBTs; Added delay; Cutoff frequency; Delay effects; Electron emission; Electron traps; Fabrication; Heterojunction bipolar transistors; Parasitic capacitance; Schottky barriers; Semiconductor device manufacture;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491954
