DocumentCode :
296317
Title :
Orientation effect on Si3N4 passivated InP/InGaAs heterojunction bipolar transistors
Author :
Sachelarie, D. ; Pelouard, J.-L. ; Benchimol, J.L.
Author_Institution :
ICCE, Bucharest, Romania
fYear :
1996
fDate :
21-25 Apr 1996
Firstpage :
149
Lastpage :
151
Abstract :
The paper investigates experimentally, for the first time, the emitter orientation effects on the Gummel plots and emitter-base reverse characteristic of the Si3N4 fully passivated InP/InGaAs heterojunction bipolar transistors
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; Gummel plots; InP-InGaAs; Si3N4; Si3N4 passivated HBT; emitter orientation effect; emitter-base reverse characteristic; heterojunction bipolar transistors; Epitaxial layers; Etching; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Shape; Stress; Substrates; Telecommunications; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
Type :
conf
DOI :
10.1109/ICIPRM.1996.491957
Filename :
491957
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=296317
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