Title :
Wide temperature 1.55 μm InGaAsP SL-MQW DFB lasers with high reliability
Author :
Klenk, M. ; Ambrosy, A. ; Bouayad-Amine, J. ; Buchali, F. ; Duetting, K. ; Hirler, H.-P. ; Hehmann, J. ; Idler, W. ; Lach, E. ; Laube, G. ; Weinmann, R. ; Mayer, H.P. ; Pagnod, P.
Author_Institution :
Res. Div., Alcatel SEL, Stuttgart, Germany
Abstract :
The introduction of customer access services require low cost laser modules capable for operation in a wide temperature range. We report on optimization of laser structures for wide temperature characteristics of 1.55 μm DFB lasers. Single lasers conventionally mounted and laser arrays flip-chip mounted on silicon-motherboards by Au/Au thermo compression bonding show excellent reliability. Stability of the laser-fibre coupling was high in temperature cycling and burn-in
Keywords :
III-V semiconductors; distributed feedback lasers; flip-chip devices; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser beams; laser feedback; laser reliability; laser stability; optical fibre couplers; quantum well lasers; semiconductor laser arrays; 1.55 mum; Au/Au thermo compression bonding; InGaAsP; InGaAsP laser; SL-MQW DFB lasers; Si-motherboards; burn-in; customer access services; laser arrays flip-chip; laser-fibre coupling; low cost laser modules; reliability; temperature cycling; wide temperature range; Bonding; Costs; Fiber lasers; Holography; Laser stability; Optical coupling; Power generation; Quantum well lasers; Temperature distribution; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491960
