• DocumentCode
    296320
  • Title

    Record tuning range of a 1.55 μm DBR laser realized by selective area growth

  • Author

    Delprat, D. ; Silvestre, L. ; Ougazzaden, A. ; Delorme, F. ; Slempkes, S. ; Ramdane, A.

  • Author_Institution
    France Telecom, CNET, Bagneux, France
  • fYear
    1996
  • fDate
    21-25 Apr 1996
  • Firstpage
    162
  • Lastpage
    164
  • Abstract
    Wavelength tunable lasers are key devices for WDM optical communication systems. Several approaches have been used to realize these components such as butt-coupling, vertical coupling or Selective Area Growth (SAG). We used the latter owing to its simplicity for achieving, in only one epitaxial step, regions of different transition energy and high optical coupling factor. An optimized guide structure allowed us to reach a tuning range of 7 nm, which is to the best of our knowledge a record with this approach. The use of strained MQWs allows the active-passive wavelength detuning to be reduced down to about 80 nm which results in a quite stable output power (+1 dB) during tuning of the laser diode
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser tuning; optical couplers; optical fabrication; optical transmitters; quantum well lasers; wavelength division multiplexing; 1.55 mum; 80 nm; DBR laser; InGaAsP; WDM optical communication systems; Wavelength tunable lasers; active-passive wavelength detuning; butt-coupling; epitaxial step; laser diode; optical coupling factor; optimized guide structure; selective area growth; stable output power; strained MQWs; transition energy; tuning range; vertical coupling; Distributed Bragg reflectors; Laser transitions; Laser tuning; Optical coupling; Optical fiber communication; Optical tuning; Power generation; Quantum well devices; Tunable circuits and devices; Wavelength division multiplexing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
  • Conference_Location
    Schwabisch-Gmund
  • Print_ISBN
    0-7803-3283-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1996.491961
  • Filename
    491961