Title :
Aluminium free GaInAsP/GaAs lasers of 808 nm wavelength range by gas source MBE
Author :
Aarik, J. ; Ovtchinnikov, A. ; Asonen, H.
Author_Institution :
Tutcore Ltd., Tampere, Finland
Abstract :
We report on the manufacturing and performance of Al-free GaInAsP/GaAs laser diodes and laser bars operating in the 808 nm range commonly used for the Nd-YAG laser pumping. These lasers were for the first time grown by the gas source molecular beam epitaxy and demonstrated to perform favorably with the commonly used AlGaAs based material
Keywords :
III-V semiconductors; chirp modulation; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; optical modulation; optical pumping; semiconductor lasers; 808 nm; AlGaAs based material; GaInAsP-GaAs; GaInAsP/GaAs; Nd-YAG laser pumping; gas source MBE; gas source molecular beam epitaxy; laser bars; laser diodes; Aluminum; Bars; Diode lasers; Gallium arsenide; Gas lasers; Laser excitation; Manufacturing; Molecular beam epitaxial growth; Optical materials; Pump lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491965
