DocumentCode
296321
Title
Aluminium free GaInAsP/GaAs lasers of 808 nm wavelength range by gas source MBE
Author
Aarik, J. ; Ovtchinnikov, A. ; Asonen, H.
Author_Institution
Tutcore Ltd., Tampere, Finland
fYear
1996
fDate
21-25 Apr 1996
Firstpage
176
Lastpage
179
Abstract
We report on the manufacturing and performance of Al-free GaInAsP/GaAs laser diodes and laser bars operating in the 808 nm range commonly used for the Nd-YAG laser pumping. These lasers were for the first time grown by the gas source molecular beam epitaxy and demonstrated to perform favorably with the commonly used AlGaAs based material
Keywords
III-V semiconductors; chirp modulation; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fabrication; optical modulation; optical pumping; semiconductor lasers; 808 nm; AlGaAs based material; GaInAsP-GaAs; GaInAsP/GaAs; Nd-YAG laser pumping; gas source MBE; gas source molecular beam epitaxy; laser bars; laser diodes; Aluminum; Bars; Diode lasers; Gallium arsenide; Gas lasers; Laser excitation; Manufacturing; Molecular beam epitaxial growth; Optical materials; Pump lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.491965
Filename
491965
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