Title :
Analysis of the temperature dependence of 1.3 μm AlGaInAs/InP multiple quantum-well lasers
Author :
Pan, Jen-Wei ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
The temperature dependence of the differential gain, carrier density, and threshold current density for 1.3 μm AlGaInAs/lnP multiple quantum-well lasers has been theoretically studied using the optical gain calculation from 250 K to 380 K. The Auger current accounts for more than 50% of the total current. The leakage current exhibits the highest temperature sensitivity and becomes an essential part of the total current at high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 K and 84 K, respectively, which agree well with the reported experimental results
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; indium compounds; laser beams; quantum well lasers; transparency; 1.3 mum; 250 to 380 K; AlGaInAs-InP; AlGaInAs/InP multiple quantum-well lasers; Auger current; carrier density; characteristic temperatures; differential gain; leakage current; multiple quantum-well lasers; optical gain calculation; temperature dependence; temperature sensitivity; threshold current densities; threshold current density; transparency; Charge carrier density; Conducting materials; Indium phosphide; Leakage current; Optical materials; Optical sensors; Photonic band gap; Quantum well lasers; Temperature dependence; Temperature sensors;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491968
