Title :
Flip-chip-mounted pin-photodiode array for 2.5 Gbit/s-per-channel parallel optical interconnections
Author :
Spalthoff, U. ; Scherb, J. ; Korber, W. ; Ambrosy, A. ; Hehmann, J. ; Ferling, D. ; Rehm, W.
Author_Institution :
Alcatel Telecom Res. Div., Stuttgart, Germany
Abstract :
High speed InP-InGaAs-InP pin photodiode arrays on semi-insulating InP substrate have been realized. Essentially flat frequency response up to 4 GHz has been achieved due to low diode capacitance of 530 fF at -10 volts and low series resistance. After Au/Au thermocompression flip-chip bonding onto silicon motherboards with integrated V-grooves, interconnection lines and Au bumps they have been passively coupled to single mode fibre ribbons. The overall performance demonstrates that the array simultaneously meets advanced requirements for high sensitivity 2.5 Gbit/s receivers as well as for low-cost fibre coupling with passive alignment
Keywords :
III-V semiconductors; flip-chip devices; frequency response; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; optical fabrication; optical fibre couplers; optical interconnections; optical receivers; p-i-n photodiodes; sensitivity; substrates; 10 V; 2.5 Gbit/s; 4 GHz; 530 fF; Au bumps; Au/Au thermocompression; Gbit/s receivers; Gbit/s-per-channel parallel optical interconnections; InP; InP-InGaAs-InP; InP-InGaAs-InP pin photodiode arrays; flat frequency response; flip-chip bonding; flip-chip-mounted pin-photodiode array; high sensitivity; integrated V-grooves; interconnection lines; low diode capacitance; low series resistance; low-cost fibre coupling; passive alignment; passively coupled; semi-insulating InP substrate; silicon motherboards; single mode fibre ribbons; Bonding; Epitaxial growth; Etching; Gold; Indium phosphide; Optical arrays; Optical interconnections; PIN photodiodes; Silicon; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492027
