High speed, monolithically integrated pin-HEMT photoreceiver fabricated on InP with a tunable bandwidth up to 22 GHz using a novel circuit design

Author

Klepser, B -U H ; Spicher, J. ; Bergamaschi, C. ; Patrick, W. ; Bächtold, W.

Author_Institution

Lab. for Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1996

fDate

21-25 Apr 1996

Firstpage

443

Lastpage

446

Abstract

High speed monolithically integrated photoreceivers were fabricated showing flat photo response and a state of the art bandwidth of 18 GHz, which should be sufficient for data transmission systems well beyond 20 Gbit/s. The circuitry consists of a high input impedance front-end design followed by an equalizing second stage to compensate the input capacitance. A state of the art input noise current of 12 pA/√Hz within the bandwidth was obtained. The bandwidth of the photoreceiver can be tuned with the bias voltages. For a 3 dB peak at 15 GHz a total bandwidth of 22 GHz was obtained

Keywords

HEMT integrated circuits; III-V semiconductors; digital communication; indium compounds; integrated optoelectronics; monolithic integrated circuits; optical receivers; p-i-n photodiodes; 20 Gbit/s; 22 GHz; InP; bias voltages; circuit design; data transmission systems; flat photo response; front-end design; input capacitance; input noise current; monolithically integrated pin-HEMT circuit; photoreceiver; tunable bandwidth; Bandwidth; Capacitance; Circuit noise; HEMTs; Impedance; Indium phosphide; Molecular beam epitaxial growth; Noise reduction; Photodiodes; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492277

Filename

492277