Growth and application of group III-antimonides by MOVPE

Author

Klipstein, P.C. ; Lakrimi, M. ; Lyapin, S. ; Mason, N.J. ; Nicholas, R.J. ; Walker, P.J.

Author_Institution

Clarendon Lab., Oxford Univ., UK

fYear

1996

fDate

21-25 Apr 1996

Firstpage

454

Lastpage

457

Abstract

There are a number of important considerations in common in the growth of InP/InGaAs and InAs/GaSb superlattices. These include: the uniformity of the periodicity within the superlattice, the type of interfaces and their arrangement within the superlattice and the abruptness of those interfaces. InAs/GaSb superlattices are a small sub-set of antimonide based semiconductors which are of interest to those studying solid state physics and designing devices with infrared applications. This paper will highlight the growth, by MOVPE, of some InAs/GaSb superlattices, and compare this with published results from the growth of InGaAs/InP superlattices, particularly with respect to the issues mentioned above

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; light absorption; semiconductor superlattices; vapour phase epitaxial growth; InAs-GaSb; InAs/GaSb superlattices; InGaAs-InP; InP/InGaAs superlattices; MOVPE growth; group III-antimonides; infrared applications; interfaces; periodicity uniformity; Capacitive sensors; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Kinetic theory; Laboratories; Raman scattering; Semiconductor superlattices; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492280

Filename

492280