DocumentCode
296345
Title
Reduction of the output conductance in InAlAs/InGaAs HEMTs with 0.15 μm gates
Author
Heiss, H. ; Xu, D. ; Kraus, S. ; Sexl, M. ; Böhm, G. ; Tränkle, G. ; Weimann, G.
Author_Institution
Walter-Schottky-Inst., Tech. Univ. Munchen, Germany
fYear
1996
fDate
21-25 Apr 1996
Firstpage
470
Lastpage
473
Abstract
We have optimized the layer structure and the width of lateral gate recess in lattice matched InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) to reduce the output conductance and kink-effect. Very low output conductances less than 30 mS/mm lead to excellent fmax-values (maximum stable gain) of more than 320 GHz for gate lengths of 0.51 μm
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 0.15 micron; 30 mS/mm; 320 GHz; EHF; InAlAs-InGaAs; InAlAs/InGaAs HEMTs; MM-wave device; kink-effect reduction; lateral gate recess; lattice matched; output conductance reduction; Buffer layers; Etching; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Lattices; MODFETs; Superlattices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.492284
Filename
492284
Link To Document