AFM study of surface topography of InP epilayers: effect of miscut angle and growth temperature during MOVPE

Author

Soulière, V. ; Thévenot, V. ; Dumont, H. ; Monteil, Y. ; Bouix, J. ; Regreny, P. ; Duc, Tran Minh

Author_Institution

Univ. Claude Bernard, Villeurbanne, France

fYear

1996

fDate

21-25 Apr 1996

Firstpage

496

Lastpage

499

Abstract

Our objective is the investigation of MOVPE growth mechanisms for InP. We focused on the surface topography observed by Atomic Force Microscopy (AFM). It is known that growth conditions such as thermal annealing, growth temperature or V/III ratio have a strong influence on growth mechanisms and surface topography. We present recent results on growth mechanisms on vicinal and highly misoriented InP surfaces studied by AFM

Keywords

III-V semiconductors; atomic force microscopy; indium compounds; semiconductor epitaxial layers; semiconductor growth; surface topography; vapour phase epitaxial growth; AFM study; InP; InP epilayer; MOVPE; MOVPE growth mechanisms; V/III ratio; atomic force microscopy; growth conditions; growth mechanisms; growth temperature; highly misoriented InP surface; miscut angle; surface topography; thermal annealing; vicinal InP surface; Annealing; Atomic force microscopy; Epitaxial growth; Epitaxial layers; Indium phosphide; Shape; Substrates; Surface morphology; Surface topography; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492291

Filename

492291