Title :
AFM study of surface topography of InP epilayers: effect of miscut angle and growth temperature during MOVPE
Author :
Soulière, V. ; Thévenot, V. ; Dumont, H. ; Monteil, Y. ; Bouix, J. ; Regreny, P. ; Duc, Tran Minh
Author_Institution :
Univ. Claude Bernard, Villeurbanne, France
Abstract :
Our objective is the investigation of MOVPE growth mechanisms for InP. We focused on the surface topography observed by Atomic Force Microscopy (AFM). It is known that growth conditions such as thermal annealing, growth temperature or V/III ratio have a strong influence on growth mechanisms and surface topography. We present recent results on growth mechanisms on vicinal and highly misoriented InP surfaces studied by AFM
Keywords :
III-V semiconductors; atomic force microscopy; indium compounds; semiconductor epitaxial layers; semiconductor growth; surface topography; vapour phase epitaxial growth; AFM study; InP; InP epilayer; MOVPE; MOVPE growth mechanisms; V/III ratio; atomic force microscopy; growth conditions; growth mechanisms; growth temperature; highly misoriented InP surface; miscut angle; surface topography; thermal annealing; vicinal InP surface; Annealing; Atomic force microscopy; Epitaxial growth; Epitaxial layers; Indium phosphide; Shape; Substrates; Surface morphology; Surface topography; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492291
