Title :
Studies on gas-switching sequences influence on the quality of MOVPE InGaAs/InP superlattice structures
Author :
Strupinski, W. ; Czub, M. ; Gaca, J. ; Wòjcik, M.
Author_Institution :
Inst. of Electron. Mater. Technol., Warsaw, Poland
Abstract :
The growth of MOVPE heterostructures, especially when thickness of single layers is the order of several ML requires high structural quality of interface transition regions. Structural disorder on the atomic scale called interface roughness and alloy fluctuations related to exchange and carry-over processes determine the final device parameters. This paper is devoted to the examination of the correlation between the growth parameters and the interface ideality in view of chemical composition for the case InP/InGaAs/InP. Among different techniques, i.e. PL, CL, HTEM, which are applied for evaluation of interface character, the X-ray method was chosen
Keywords :
III-V semiconductors; X-ray diffraction; cathodoluminescence; fluctuations; gallium arsenide; indium compounds; interface structure; photoluminescence; semiconductor growth; semiconductor superlattices; transmission electron microscopy; vapour phase epitaxial growth; CL; HTEM; InP-InGaAs; InP/InGaAs/InP; MOVPE InGaAs/InP superlattice structures; MOVPE heterostructures; PL; X-ray method; alloy fluctuations; carry-over processes; chemical composition; device parameters; exchange; gas-switching sequence; growth parameters; interface ideality; interface roughness; interface transition regions; quality; structural disorder; structural quality; thickness; Atomic layer deposition; Chemicals; Epitaxial growth; Epitaxial layers; Fluctuations; Indium gallium arsenide; Indium phosphide; Inductors; Superlattices; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492293
