Title :
MOVPE growth of GaAs and InP based compounds in production reactors using TBAs and TBP
Author :
Beccard, R. ; Schmitz, D. ; Knauf, J. ; Lengeling, G. ; Schulte, F. ; Jürgensen, H.
Author_Institution :
Aixtron GmbH, Aachen, Germany
Abstract :
For many MOVPE users the decision to switch production completely to TBP and TBAs may still be difficult as long as it is not proven that all III-V materials can be grown with TBAs/TBP in the same class of reactors. The aim of this study is to demonstrate that these precursors can replace arsine and phosphine for the growth of all device structures in the Al-Ga-In-As-P system
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; organic compounds; semiconductor growth; vapour phase epitaxial growth; Al-Ga-In-As-P; Al-Ga-In-As-P system; GaAs; GaAs-base compounds; III-V materials; InP; InP-based compounds; MOVPE growth; TBAs; TBP; precursors; production reactors; Epitaxial growth; Epitaxial layers; Fluid flow; Gallium arsenide; Indium phosphide; Inductors; Manufacturing; Production; Switches; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492294
