DocumentCode
296349
Title
MOVPE growth of GaAs and InP based compounds in production reactors using TBAs and TBP
Author
Beccard, R. ; Schmitz, D. ; Knauf, J. ; Lengeling, G. ; Schulte, F. ; Jürgensen, H.
Author_Institution
Aixtron GmbH, Aachen, Germany
fYear
1996
fDate
21-25 Apr 1996
Firstpage
507
Lastpage
510
Abstract
For many MOVPE users the decision to switch production completely to TBP and TBAs may still be difficult as long as it is not proven that all III-V materials can be grown with TBAs/TBP in the same class of reactors. The aim of this study is to demonstrate that these precursors can replace arsine and phosphine for the growth of all device structures in the Al-Ga-In-As-P system
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; organic compounds; semiconductor growth; vapour phase epitaxial growth; Al-Ga-In-As-P; Al-Ga-In-As-P system; GaAs; GaAs-base compounds; III-V materials; InP; InP-based compounds; MOVPE growth; TBAs; TBP; precursors; production reactors; Epitaxial growth; Epitaxial layers; Fluid flow; Gallium arsenide; Indium phosphide; Inductors; Manufacturing; Production; Switches; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.492294
Filename
492294
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