DocumentCode
296351
Title
Growth temperature dependence of composition in In1-xGa xP alloy system grown by GSMBE using tertiarybutylphosphine
Author
Sai, H. ; Fujikura, H. ; Hashizume, T. ; Hasegawa, H.
Author_Institution
Graduate Sch. of Electron. & Inf. Eng., Hokkaido Univ., Sapporo, Japan
fYear
1996
fDate
21-25 Apr 1996
Firstpage
521
Lastpage
524
Abstract
In1-xGaxP is a promising material for optoelectronic devices in the visible wavelength and long wavelength ranges as well as for use in high-speed electronic devices such as hetero-bipolar transistors (HBTs) and high electron mobility transistors (HEMTs). However its controlled epitaxial growth is known to be difficult because the alloy composition x of In1-xGax P strongly depends on the growth temperature Tg. In the case of gas source molecular beam epitaxy (GSMBE) growth of In1-xGa xP, there has been no report on the relationship between x and Tg. The purpose of the present paper is to investigate growth-temperature dependence of growth rate and composition for GSMBE growth of In1-xGaxP using tertiarybutylphosphine (TBP) and to clarify the underlying mechanism. TBP is a promising substitute for PH3 due to its relatively low toxicity
Keywords
III-V semiconductors; chemical beam epitaxial growth; gallium compounds; indium compounds; semiconductor growth; GSMBE; HBT; HEMT; In1-xGaxP; InGaP; alloy composition; composition; controlled epitaxial growth; gas source molecular beam epitaxy; growth rate; growth temperature dependence; mechanism; optoelectronic devices; tertiarybutylphosphine; toxicity; Gallium alloys; Gallium arsenide; HEMTs; MODFETs; Substrates; Surface cracks; Surface morphology; Temperature dependence; X-ray diffraction; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location
Schwabisch-Gmund
Print_ISBN
0-7803-3283-0
Type
conf
DOI
10.1109/ICIPRM.1996.492298
Filename
492298
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